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Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

  • Tomohiro Yamaguchi (a1), Yoshiki Saito (a1), Kenji Kano (a1), Tomo Muramatsu (a1), Tsutomu Araki (a1), Yasushi Nanishi (a1), Nobuaki Teraguchi (a2) and Akira Suzuki (a2)...

Abstract

InN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

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Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

  • Tomohiro Yamaguchi (a1), Yoshiki Saito (a1), Kenji Kano (a1), Tomo Muramatsu (a1), Tsutomu Araki (a1), Yasushi Nanishi (a1), Nobuaki Teraguchi (a2) and Akira Suzuki (a2)...

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