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Tunneling Spectroscopy of Single-Crystal CoSi2 and NiSi2 Epilayers on n-type Si

Published online by Cambridge University Press:  25 February 2011

R. J. Hauenstein ,
L. J. Schowalter ,
B. D. Hunt ,
O. J. Marsh  and
T. C. McGill
R. J. Hauenstein
Affiliation:
California Institute of Technology, Pasadena, CA 91125
L. J. Schowalter
Affiliation:
General Electric Corp. R&D Center, P. O. Box 8, Schenectady, NY 12301
B. D. Hunt
Affiliation:
General Electric Corp. R&D Center, P. O. Box 8, Schenectady, NY 12301
O. J. Marsh
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
T. C. McGill
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Electron tunneling spectroscopy experiments have been performed on single-crystal epitaxial silicide films grown on (111)-oriented (off 4 °) Si:As. 250 Å-thick films of CoSi2, and type-A and -B NiSi2 on degenerate substrates (Nd = 2 × 1019 cm−3) have been studied. All spectra show forward bias peaks at energies corresponding to k-conserving bulk Si phonons while in reverse bias only the Si TA phonon is observed for NiSi2 /Si structures. Plots of dV/dI vs. V for CoSi2 /Si structures yield maxima at a forward bias of 39meV, indicating an enhancement in n-type dopant concentration within ˜ 100 Å or more of the silicide-silicon interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 227
Copyright
Copyright © Materials Research Society 1986

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References

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