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Tunneling Spectroscopy of Single-Crystal CoSi2 and NiSi2 Epilayers on n-type Si

  • R. J. Hauenstein (a1), L. J. Schowalter (a2), B. D. Hunt (a2), O. J. Marsh (a3) and T. C. McGill (a1)...

Abstract

Electron tunneling spectroscopy experiments have been performed on single-crystal epitaxial silicide films grown on (111)-oriented (off 4 °) Si:As. 250 Å-thick films of CoSi2, and type-A and -B NiSi2 on degenerate substrates (Nd = 2 × 1019 cm−3) have been studied. All spectra show forward bias peaks at energies corresponding to k-conserving bulk Si phonons while in reverse bias only the Si TA phonon is observed for NiSi2 /Si structures. Plots of dV/dI vs. V for CoSi2 /Si structures yield maxima at a forward bias of 39meV, indicating an enhancement in n-type dopant concentration within ˜ 100 Å or more of the silicide-silicon interface.

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Tunneling Spectroscopy of Single-Crystal CoSi2 and NiSi2 Epilayers on n-type Si

  • R. J. Hauenstein (a1), L. J. Schowalter (a2), B. D. Hunt (a2), O. J. Marsh (a3) and T. C. McGill (a1)...

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