Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T17:14:05.668Z Has data issue: false hasContentIssue false
  • English
  • Français

Tuning the Mechanical Properties of Poly-silicon Film by Surface Modification Using Plasma Treatment

Published online by Cambridge University Press:  15 March 2011

Wang-Shen Su ,
Weileun Fang  and
Ming-Shih Tsai
Wang-Shen Su
Affiliation:
Institute of Microelectromechanical Systems, National Tsing-Hua UninersityNo. 101, Sec. 2, Kuang-Fu Rd., Hsinchu 300, Taiwan
Weileun Fang
Affiliation:
Institute of Microelectromechanical Systems, National Tsing-Hua UninersityNo. 101, Sec. 2, Kuang-Fu Rd., Hsinchu 300, Taiwan
Ming-Shih Tsai
Affiliation:
National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, Hsinchu 300, Taiwan
Get access

Abstract

The mechanical properties of thin film are very critical for the performance of MEMS devices. Since Poly-silicon film is of great use in MEMS, this study investigates the surface modification by various plasma treatments to finely tune the chemical and mechanical properties of poly-silicon film. Various plasma treatments, including H2, O2, and NH3, were implemented to modify the original Si-Si film bonding, Young's modulus, and hardness of poly-silicon film. These were significant Si-O, Si-OH/Si-H and Si-NH2/Si-N bonds formed after O2, H2 and NH3 plasma treatment, respectively. According to the H analysis from SIMS depth profile of, the thickness of surface modified layer would be ranged from 50 to 120 nm. In summary, the surface modification with H2 plasma can reduce the elastic modulus of poly-silicon film for about 32.3%; moreover, the following vacuum annealing will further reduce the elastic modulus for about 60.2%. Therefore, surface modification with an adequate plasma treatment would be an effective method to change the chemical and mechanical properties of poly-silicon film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 820: Symposia O/R – Nanoengineered Assemblies and Advanced Micro/Nanosystems , 2004 , O8.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fang, W., Lo, Chun-Yen, Sensors and Actuators A, 84, 310–314 (2000).Google Scholar
2. Bhushan, B., Koinkar, V. N., Sens. Actuactors A, 57, 91–102 (1996).Google Scholar
3. Spearing, S. M., Acta Mater., 48, 179–196 (2000).Google Scholar
4. Zhou, H. W. et al. , Sens. Actuactors A, 104, 1–5 (2003).Google Scholar
5. Kim, M. C., Yang, S. H. et al. , Surface and Coatings Tech., 174–175, 839–844 (2003).Google Scholar
6. Oliver, W.C., Pharr, G.M., J. Mater. Res., 7, 1564 (1992).Google Scholar
7. Byun, Kyung-Mun and Lee, Won-Jong, Thin Solid Films, 376, 26–31 (2000).Google Scholar
8. Banerji, N. et al. , Thin Solid Films, 317, 214–218 (1998).Google Scholar
9. Feng, Y. et al. , Thin Solid Films, 395, 213–216 (2001).Google Scholar
10. Diniz, J.A. et al. , Nucl. Instrum. Meth. B, 166–167, 64–69 (2000).Google Scholar
11. Salonen, J. et al. , Applied Surface Science, 120, 191–198 (1997).Google Scholar
12. Ténégal, F. et al. , Journal of Electron Spectroscopy and Related Phenomena, 109, 246 (2000).Google Scholar
13. Muilenberg, G. E. (Ed.), Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer, 1979.Google Scholar
14. Avila, J., Sacedon, J. L., Appl. Phys. Lett., 66, 6 (1995).Google Scholar
15. Liu, Y. F., Ren, Z. M., Song, W. D., Chen, D. S. H., J. Appl. Phys., 84, 2133 (1998).Google Scholar