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Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments

Published online by Cambridge University Press:  21 February 2011

Ting Feng  and
Aris Christou
Ting Feng
Affiliation:
University of Maryland, Department of Materials and Nuclear Engineering, College Park, MD 20742
Aris Christou
Affiliation:
University of Maryland, Department of Materials and Nuclear Engineering, College Park, MD 20742
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Abstract

The thermal stability of W/Si multilayers (MLs) has been simulated up to 1000°C and 8 hour anneals. The simulation has been carried out with and without the presence of Au overlayers. The results are compared with experimental results by Rutherford Backscattering spectroscopy (RBS). The RBS results also show the presence of excess Ga at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 415
Copyright
Copyright © Materials Research Society 1995

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References

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