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tudy of the Surface Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and Photoluminescence Spectroscopy

Published online by Cambridge University Press:  25 February 2011

I-Hsing Tan ,
Song Shi Stone ,
Craig Prater ,
Richard Mirin ,
Evelyn Hu ,
John Bowers ,
James Merz  and
Paul Hansma
I-Hsing Tan
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Song Shi Stone
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Physics, University of California, Santa Barbara, CA 93106
Craig Prater
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
Richard Mirin
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Evelyn Hu
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
John Bowers
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
James Merz
Affiliation:
QUEST Science and Technology Center, University of California, Santa Barbara, CA 93106 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Paul Hansma
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
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Abstract

The efficacy of residual photoresist removal on the top surface of the InGaAs QWW grating and the effects of surface oxides on the optical property of quantum well wires (QWWs) were examined through atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Different resist removal treatments, including acetone, ozone and diluted HC1 were evaluated. Both AFM and PL measurements reveal that with the surface cleaning processing we have developed, high luminescence efficiency from the QWWs is conserved after removal of the residual photoresist.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 317
Copyright
Copyright © Materials Research Society 1992

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References

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