Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-19T08:17:06.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Triple-probe Atomic Force Microscope: Measuring a carbon nanotube/DNA MIS-FET

Published online by Cambridge University Press:  11 February 2011

Kei Shimotani ,
Hiroyuki Watanabe ,
Chikara Manabe ,
Taishi Shigematsu  and
Masaaki Shimizu
Kei Shimotani
Affiliation:
Ecology Research Lab., Corporate Research Laboratory, Fuji Xerox Co., Ltd., 430, Sakai, Nakai, Ashigarakami, Kanagawa, 259–0157, Japan
Hiroyuki Watanabe
Affiliation:
Ecology Research Lab., Corporate Research Laboratory, Fuji Xerox Co., Ltd., 430, Sakai, Nakai, Ashigarakami, Kanagawa, 259–0157, Japan
Chikara Manabe
Affiliation:
Ecology Research Lab., Corporate Research Laboratory, Fuji Xerox Co., Ltd., 430, Sakai, Nakai, Ashigarakami, Kanagawa, 259–0157, Japan
Taishi Shigematsu
Affiliation:
Ecology Research Lab., Corporate Research Laboratory, Fuji Xerox Co., Ltd., 430, Sakai, Nakai, Ashigarakami, Kanagawa, 259–0157, Japan
Masaaki Shimizu
Affiliation:
Ecology Research Lab., Corporate Research Laboratory, Fuji Xerox Co., Ltd., 430, Sakai, Nakai, Ashigarakami, Kanagawa, 259–0157, Japan
Get access

Abstract

We have constructed an advanced electric probing system, which is a triple-probe atomic force microscope (T-AFM). The T-AFM consists of “Nanotweezers” and an AFM with a carbon nanotube probe. Using this system, we fabricated a single-walled carbon nanotubes (SWNTs)/deoxyribonucleic acid (DNA) three-terminal device and measured the current-voltage (I-V) curves of this device. In this three-terminal device, DNA strands were entangled with the SWNT bundle, and behaved as a gate-insulator-layer. This three-terminal device worked as a metal-insulator-semiconductor field effect transistor (MIS-FET) with depletion switching behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 761: Symposia B/C/D/F/G/NN – Molecular Electronics , 2002 , NN8.3/G14.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Binnig, G., Rohrer, H., Gerber, Ch., and Weibel, E., Phys. Rev. Lett. 50, 120(1983).Google Scholar
2. Binnig, G., Quate, C. F., and Gerber, Ch., Phys. Rev. Lett. 56, 930(1986).Google Scholar
3. Watanabe, H., Manabe, C., Shigematsu, T., Shimotani, K., and Shimizu, M., Appl. Phys. Lett. 79, 2462 (2001).Google Scholar
4. Kim, P., and Lieber, C. M., Science 286, 2148 (1999).Google Scholar
5. Dai, H., Hafner, J. H., Rinzler, A. G., Colbert, D. T., and Smalley, R. E., Nature 384, 147 (1996).Google Scholar
6. Anazawa, K., Shimotani, K., Manabe, C., Watanabe, H., and Shimizu, M., Appl. Phys. Lett. 81, 739 (2002).Google Scholar
7. Collins, P. G., Arnold, M. S., and Avouris, Ph., Science 292, 706 (2001).Google Scholar