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Trapping of Atomic Hydrogen in a-Si:H from G – D Silane Plasma

Published online by Cambridge University Press:  25 February 2011

S. A. Cruz-Jimenez ,
S. Muhl  and
R. Salcedo
S. A. Cruz-Jimenez
Affiliation:
Instituto de Investigaciones en Materiales, U. N. A.M., Apatado Postal 70-360, 04510, México, D. F., México.
S. Muhl
Affiliation:
Instituto de Investigaciones en Materiales, U. N. A.M., Apatado Postal 70-360, 04510, México, D. F., México.
R. Salcedo
Affiliation:
Instituto de Investigaciones en Materiales, U. N. A.M., Apatado Postal 70-360, 04510, México, D. F., México.
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Extract

Plasma Enhanced Chemical Vapor Deposition CPECVD) is used extensively for the preparation of amorphous materials. However, to date we do not have a full description of the deposition process. By this we refer to the following steps ; the source gas decomposition [1], the gas phase reactions, diffusion within the plasma [a], adsorption of the various species, solid-gas reactions, nucleation and subsequent film growth [3–7]. To a large extent the diversity of the processes which are involved in film formation explain the observed variation in the characteristics of supposedly identical material made in different laboratories. Even with such variations certain trends relating the properties of the materials with the growth processes are apparent. In particular it is well established that hydrogen saturation of the dangling bonds is essential. Although how much hydrogen is optimum, and how it is incorporated in the growing film are questions of considerable importance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 375
Copyright
Copyright © Materials Research Society 1989

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References

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