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Trapping of argon in ion beam deposited thin films of CNx Hy

Published online by Cambridge University Press:  01 February 2011

Asghar N. Kayani  and
David C. Ingram
Asghar N. Kayani
Affiliation:
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Edwards Accelerator laboratory, Ohio University, Athens OH 45701
David C. Ingram
Affiliation:
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Edwards Accelerator laboratory, Ohio University, Athens OH 45701
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Abstract

Unbalanced magnetron sputtering deposition of CNx Hy films has been performed with various levels of negative substrate bias and with different flow rates of nitrogen and hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The elemental concentrations of the films were measured in samples deposited on glassy carbon with a 2.2 MeV of He beam used to perform simultaneous RBS and ERS. Argon was found to be trapped in the non-hydrogenated films to a level of up to ∼ 4.6 %. The concentration of argon increased for the films deposited under higher negative bias. With the introduction of hydrogen, argon trapping was first minimized and later completely eliminated, even at higher bias conditions, suggesting that the softness of the films brought on by hydrogenation also caused the films to be unable to trap argon during growth and thus showing that argon stability is dependent on burial below a surface of particular structural properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.22
Copyright
Copyright © Materials Research Society 2004

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References

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