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Trapping Behavior of Thin Siliconoxynitride Layers Prepared by Rapid Thermal Processing

Published online by Cambridge University Press:  15 February 2011

R. Beyer ,
H. Burghardt ,
R. Reich ,
E. Thomas ,
D. Grambole ,
F. Herrmann ,
T. Scholz ,
J. Albrecht ,
D. R. T. Zahn  and
T. Gessner
R. Beyer
Affiliation:
Technische Universität Chemnitz, Institut für Physik, Professur für Halbleiterphysik, D-09107 Chemnitz, Germany, beyer@physik.tu-chemnitz.de
H. Burghardt
Affiliation:
Technische Universität Chemnitz, Institut für Halbleiter- und Mikrosystemtechnik, Professur für Mikrotechnologie, D-09107 Chemnitz, Germany
R. Reich
Affiliation:
Technische Universität Chemnitz, Institut für Halbleiter- und Mikrosystemtechnik, Professur für Mikrotechnologie, D-09107 Chemnitz, Germany
E. Thomas
Affiliation:
Technische Universität Chemnitz, Institut für Physik, Professur für Halbleiterphysik, D-09107 Chemnitz, Germany, beyer@physik.tu-chemnitz.de
D. Grambole
Affiliation:
Forschungszentrum Rossendorf, Institut für lonenstrahlphysik und Materialforschung, PF 510119, D-01314 Dresden, Germany
F. Herrmann
Affiliation:
Forschungszentrum Rossendorf, Institut für lonenstrahlphysik und Materialforschung, PF 510119, D-01314 Dresden, Germany
T. Scholz
Affiliation:
Institut Fresenius für Angewandte Festkörperanalytik, Königsbrücker Landstraße 159, D-01 109 Dresden, Germany
J. Albrecht
Affiliation:
Institut Fresenius für Angewandte Festkörperanalytik, Königsbrücker Landstraße 159, D-01 109 Dresden, Germany
D. R. T. Zahn
Affiliation:
Technische Universität Chemnitz, Institut für Physik, Professur für Halbleiterphysik, D-09107 Chemnitz, Germany, beyer@physik.tu-chemnitz.de
T. Gessner
Affiliation:
Technische Universität Chemnitz, Institut für Halbleiter- und Mikrosystemtechnik, Professur für Mikrotechnologie, D-09107 Chemnitz, Germany
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Abstract

Siliconoxynitride layers with thicknesses between 5 and 10 nm were grown on (100) oriented silicon by rapid thermal processing (RTP) using either N2O or NH3 as nitridant. In order to study the trapping behaviour at the interface and in the insulator bulk, capacitance-voltage (CV) and current-voltage (IV) measurements have been performed combined with different magnitudes of Fowler-Nordheim stress. In addition, Deep Level Transient Spectroscopy (DLTS) has been applied for interface state detection. Auger Electron Spectroscopy (AES) has been used to obtain depth profiles for Si, N, O and C. The deconvolution of the AES signal displays significant peak contributions related to intermedium oxidation states. Nuclear Reaction Analysis (NRA) was successfully applied for hydrogen detection in buried SiOxNy thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 421
Copyright
Copyright © Materials Research Society 1996

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