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Trap Dominated Hydrogen Transport in Disordered Silicon

Published online by Cambridge University Press:  10 February 2011

N. H. Nickel ,
W. B. Jackson  and
J. Walker
N. H. Nickel
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

Hydrogen transport in polycrystalline silicon was investigated by deuterium diffusion experiments. D was introduced either from a remote plasma or a solid-state source. The data can be explained by a two-level model used to explain diffusion in amorphous silicon. The energy difference between transport level and deuterium chemical potential was found to be 1.3 eV. A band of shallow levels for hydrogen trapping is located about 0.6 eV below the transport level, while deep levels are about 1.7 eV below.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 527
Copyright
Copyright © Materials Research Society 1996

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