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Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

Published online by Cambridge University Press:  22 February 2011

J. C. Hensel ,
R. T. Tung ,
J. M. Poate ,
F. C. Unterwald  and
D. C. Jacobson
J. C. Hensel
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. C. Unterwald
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Transport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 575
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Murarka, S. P., “Silicides for VLSI Applications” (Academic, New York, 1983).Google Scholar
2. See, for example, Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M. and Jacobson, D. C., Thin Solid Films 93, 77 (1982).Google Scholar
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