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Transport Properties of B-, P-Doped and Undoped 50 kHz PECVD Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M.A. Hachicha  and
Etienne Bustarret
M.A. Hachicha
Affiliation:
LEPES-CNRS, BP 166x, F-38042, Grenoble, France, (associated to Univ. J. Fourier de Grenoble)
Etienne Bustarret
Affiliation:
Max-Planck-Institute für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, FRG
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Abstract

Undoped 500 nm-thick silicon layers with a crystalline fraction around 95% and an average grain size of 20 nm have been deposited at 350°C by 50 kHz triode PECVD in a H2/SiH4 mixture, in the presence of a magnetic field. Their room temperature (rt) dc conductivity μrt is 0.03 Δ−1cm−1 for a Hall mobility of 0.8 cm 2V−1s−1.

The study by SIMS, infrared absorption, grazing angle x-ray diffraction and Raman scattering spectroscopies of the doped samples shows how the crystalline fraction and the grain size drop as the B2H6/SiH4 and PH3/SiH4 volumic ratios increase from 10 ppm to 1%.

The rt dc conductivity reaches 2 Δ−1 cm−1 (Hall mobility: 15 cm2V−ls−1) for a solid phase density of 1019 cm−3 boron atoms, and 30 Δ−1cm−1 (Hall mobility: 55 cm2V−ls−1) at the maximum P incorporation of 8 × 1020cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 235
Copyright
Copyright © Materials Research Society 1990

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References

[1] Vepíek, S., Iqbal, Z., Kuhne, R.O., Capezzuto, P., Sarott, F.A., Gimzewski, J.K., J. Phys. C 16, 6241 (1983).Google Scholar
[2] Konuma, M., Curtins, H., Sarott, F.A., Vepfek, S., Phil. Mag. B 55, 377 (1987).Google Scholar
[3] Tsu, R., Gonzalez-Hernandez, J., Chao, S.S., Lee, S.C., Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
[4] Spear, W.E., Willeke, G., Lecomber, P.G., Fitzgerald, A.G., J. de Physique (France) 42, C4–257 (1981).Google Scholar
[5] Hachicha, M.A., Bruyere, J.C., Bustarret, E., Deneuville, A., Brunel, M., “Ion and Plasma Assisted Techniques 87”, Int. Conf. Proc. published by Conferences Exhibitions Publications Consultants Ltd., Edinburgh (UK), p. 360 (1987).Google Scholar
[6] Willeke, G., Spear, W.E., Jones, D.I., Lecomber, P.G., Phil. Mag. B 46, 177 (1982).Google Scholar
[7] Mori, K., Kitagawa, M., Hirao, T., Ishihara, S., Ohno, M., Jpn. J. Appl. Phys. 20, 2431 (1981).Google Scholar
[8] Lifshitz, N., Luryi, S., Sheng, T.T., Appl. Phys. Lett. 51, 1824 (1987).Google Scholar
[9] Hamasaki, T., Kurata, H., Hirose, M., Osaka, Y., Appl. Phys. Lett. 37, 1084 (1980).Google Scholar
[10] Bustarret, E., Vaillant, F., Hepp, B., Mater. Res. Soc. Symp. Proc. 118, 123 (1988).Google Scholar
[11] Bustarret, E., Hachicha, M.A., this volume.Google Scholar
[12] Mishima, Y., Hirose, M., Osaka, Y., J. Appl. Phys. 51, 1157 (1980).Google Scholar
[13] Bustarret, E., Hachicha, M.A., Brunel, M., Appl. Phys. Lett. 52, 1675 (1988).Google Scholar
(14] Satoh, T., Hiraki, A., Jap. J. Appl. Phys. 24, L491 (1985).Google Scholar