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Transport Anisotropy in PLD-Made La0.75Sr0.25MnO3 Films

Published online by Cambridge University Press:  10 February 2011

P. Johnsson ,
S.I. Khartsev  and
A.M. Grishin
P. Johnsson
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
S.I. Khartsev
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
A.M. Grishin
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
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Abstract

A sequence of epitaxial La0.75Sr0.25MnO3 (LSMO) films with thickness ranging from 2400 to 50 Å have been prepared by pulsed laser deposition onto (110) SrTiO3 (STO) substrates. Compared with oar previous results on LSMO/STO(100) films [1], films on STO(110) substrates exhibit strong, anisotropy of electrical resistivity p. p measured in [110] direction is comparable with the resistivity of LSMO/STO(100) films while p in [001] direction is 25 times higher than in STO(100) case. The maximum value of anisotropy parameter p[001]/p[110] = 25 is reached for thick films at the low temperature of 90 K. Distinct crossover from 3D to 2D case has been observed. For thick films anisotropy monotonously decreases with the temperature increase. Films thinner than 200 Å exhibit a maximum of anisotropy parameter, which shifts to lower temperatures with the thickness decrease. The maximum temperature coefficient of resistivity (TCR) was found to be around 2% if measured along [001] direction and about 50 % higher in [11O] inplane direction. We explain the observed effects in terms of the crystalline properties of fabricated films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 83
Copyright
Copyright © Materials Research Society 2000

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References

[1] Khartsev, S. I., Johnsson, P., Grishin, A. M., J. Appl. Phys. 87, 2394, 2000.Google Scholar
[2] Jin, S., Teifel, T. H., McCormack, M., Fastnacht, R. A., Ramesh, R., Chen, L. H., Science, 264, 413, 1994.Google Scholar
[3] Suzuki, Y., Hwang, H. Y., J. Appl. Phys. 85, 4797, 1999.Google Scholar
[4] O'Donnel, J., Eckstein, J. N., Rzchowski, M. S., Appl. Phys. Lett. 76, 218, 2000.Google Scholar
[5] Mira, J., Fondado, A., Hueso, L. E., Rivas, J., Rivadulla, F., Quintela, M. A. Lépez, Phys. Rev. B, 61, 5857, 2000.Google Scholar
[6] Zeng, X. T., Wong, H. K., Appl. Phys. Lett. 72, 740, 1998.Google Scholar
[7] Evetts, J. E., Blamire, M. G., Mathur, N. D., Isaac, S. P.. Teo, B.-S., Cohen, L. F., Macmanus-Driscoll, J. L., Phil. Trans. R. Soc. Lond. A, 356, 1593, 1998.Google Scholar