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Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

  • Sergey Yu. Karpov (a1), Alexander S. Segal (a1), Darya V. Zimina (a1), Sergey A. Smirnov (a1), Alexander P. Sid'ko (a1), Alexey V. Kondratyev (a1), Yuri N. Makarov (a2), Denis Martin (a3), Volker Wagner (a3) and Marc Ilegems (a3)...

Abstract

On the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.

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Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

  • Sergey Yu. Karpov (a1), Alexander S. Segal (a1), Darya V. Zimina (a1), Sergey A. Smirnov (a1), Alexander P. Sid'ko (a1), Alexey V. Kondratyev (a1), Yuri N. Makarov (a2), Denis Martin (a3), Volker Wagner (a3) and Marc Ilegems (a3)...

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