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Transmission of Dirac Electrons Through Graphene Multilayers with Gaussian Profile

  • J. A. Aguilar-Hernández (a1), J. Madrigal-Melchor (a1), J. C. Martínez-Orozco (a1) and I. Rodríguez-Vargas (a1)

Abstract

In this work, we use the T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of SiO2-SiC substrates, of which we applied a Gaussian distribution in the size width of the SiC substrate. We calculate the transmittance as a function of energy for different incident angles and different number of layers of the Gaussian distribution. We obtain different stop-band regions. These regions are wider when the width of the barrier is increased. Furthermore, it is possible to tune the width and the position of stop-band with the angle of incidence, the σ value of the Gaussian distribution, and the difference between the maximum-minimum sizes of the barrier.

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Transmission of Dirac Electrons Through Graphene Multilayers with Gaussian Profile

  • J. A. Aguilar-Hernández (a1), J. Madrigal-Melchor (a1), J. C. Martínez-Orozco (a1) and I. Rodríguez-Vargas (a1)

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