Hostname: page-component-7479d7b7d-qlrfm Total loading time: 0 Render date: 2024-07-11T00:37:05.964Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Microscopy (TEM) Studies of Ge Nanocrystals

Published online by Cambridge University Press:  21 March 2011

Q. Xu ,
I.D. Sharp ,
C.Y. Liao ,
D. O. Yi ,
J.W. Ager III ,
J.W. Beeman ,
Z. Liliental-Weber ,
K.M. Yu ,
D. Zakharov  and
D. C. Chrzan
...Show all authors
Q. Xu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.
I.D. Sharp
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.
C.Y. Liao
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.
D. O. Yi
Affiliation:
Applied Science and Technology Group, University of California, Berkeley, CA 94720, U.S.A.
J.W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
J.W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
Z. Liliental-Weber
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
K.M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
D. Zakharov
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
D. C. Chrzan
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.
E.E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.
Get access

Abstract

74Ge nanocrystals were formed by ion beam synthesis in SiO2. Transmission Electron Microscopy was used to characterize the structure and properties of these Ge nanocrystals before and after liberation from the matrix. The liberation from the SiO2 matrix was achieved through selective etching in a HF bath. High-resolution micrographs and selective area diffraction confirm that the crystallinity is retained in this process. Transfer of released nanocrystals is achieved through ultrasonic dispersion in methanol and deposition onto lacey carbon films via evaporation of methanol. In an effort to determine the melting point of Ge nanocrystals and observe the growth and evolution of nanocrystals embedded in the amorphous SiO2 during heat treatment, as-grown nanocrystals were heated in-situ up to 1192°C±60°C in a JEOL 200CX analytical electron microscope. Electron diffraction patterns are recorded using a Charge-Coupled Device. A large melting hysteresis was observed around the melting temperature of bulk Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M11.17.1
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Letts. 68, 1377 (1996).Google Scholar
2. Rebohle, L., Borany, J. von, Fröb, H., and Skorupa, W., Appl. Phys. B 71, 131 (2000).Google Scholar
3. Borany, J. von, Gebel, T., Stegemann, K.-H., Thees, H.-J., and Wittmaack, M., Solid State Electronics 46, 1729 (2002)Google Scholar
4. Takagahara, T. and Takeda, K., Phys. Rev. B 46 (15), 578 (1992).Google Scholar
5. Wellner, A., Paillard, V., Bonafos, C., Coffin, H., Claverie, A., Schmidt, B. and Heinig, K. H., J. Appl. Phys. 94, 5639 (2003)Google Scholar
6. Dubiel, M., Brunsch, S., Seifert, W., Hofmeister, H., and Tan, G.L., Eur. Phys. J. D 16, 229 (2001)Google Scholar
7. Wei, S. and Zunger, A., Physical Review B 60, 5404 (1999)Google Scholar
8. Takagi, M., J. Phys. Soc. Japan 9, 359 (1954).Google Scholar
9. Goldstein, A. N., Echer, C. M., and Alivisatos, A. P., Science 256 (5062), 1425 (1992).Google Scholar
10. Wu, Y. and Yang, P., Appl. Phys. Lett. 77, 43 (2000)Google Scholar
11. Andersen, H. and Johnson, E., Nucl. Instr. and Meth. B 106, 480 (1995).Google Scholar
12. Yamamoto, M., Kashikawa, T., Yasue, T., Harima, H., and Kajiyama, K., Thin Solid Films 369, 100 (2000).Google Scholar
13. Sharp, I. D. et al. , Materials Research Society Proceedings 777, T7.6(1) (2003).Google Scholar
14. Yi, D. O. et al. , MRS Spring Meeting, Symposium P (2004).Google Scholar