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Transmission Electron Microscopy of Nitrogen Doped ZnSe/GaAs

  • L. H. Kuo (a1), L. Salamanca-Riba (a1), J. M. Depuydt (a2), H. Cheng (a2) and J. Qiu (a2)...

Abstract

Transmission election microscopy studies show that nitrogen doping changes the misfit dislocation structure in ZnSe films and decreases the density of threading dislocations. There appears to be a critical N doping concentration of ∼ 1.5 × 1018/cm3 above which the density of threading dislocations increases again. Samples with high N doping concentrations (> 1019/cm3 ) also show compensation or decrease in the carrier density of the films. Our TEM observations show that N doping can produce low energy nucleation sites for the 60° misfit dislocations at or close to the ZnSe/GaAs interface.

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References

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Transmission Electron Microscopy of Nitrogen Doped ZnSe/GaAs

  • L. H. Kuo (a1), L. Salamanca-Riba (a1), J. M. Depuydt (a2), H. Cheng (a2) and J. Qiu (a2)...

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