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Transmission Electron Microscopy of Mocvd Titanium Nitride Films

Published online by Cambridge University Press:  25 February 2011

Toshio Itoh ,
Toyohiko J. Konno ,
Robert Sinclair ,
Ivo J.M.M. Raaijmakers  and
Bruce E. Roberts
Toshio Itoh
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Toyohiko J. Konno
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Ivo J.M.M. Raaijmakers
Affiliation:
Novellus Systems Inc., San Jose, CA 95134
Bruce E. Roberts
Affiliation:
Novellus Systems Inc., San Jose, CA 95134
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Abstract

The effect of substrate temperature and process pressure on microstructure of MOCVD-TiN films deposited on oxidized Si substrates are studied by transmission electron microscopy (TEM). It is found that microstructure of MOCVD-TiN films distinctly changes with these deposition parameters and that the resistivity of the films is uniquely related to the microstructure. Films with the lowest resistivity (< 500 μohm-cm) show a uniform semi-columnar grain structure. Films with the highest resistivity (> 10,000 μohm-cm) show a uniform equi-axed micrograin structure. The other films exhibit a bi-layer structure: one layer of semi-columnar grains and the other of equiaxed micrograins. The thickness ratio of these layers changes with the deposition conditions and the resistivity is a unique function of the thickness of the semi-columnar grain layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 735
Copyright
Copyright © Materials Research Society 1994

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References

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