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Transmission Electron Microscope Investigation of Sputtered Co-Pt Thin Films

Published online by Cambridge University Press:  22 February 2011

P. Alexopoulos ,
R. H. Geiss  and
M. Schlenker
P. Alexopoulos
Affiliation:
IBM Research Division, 5600 Cottle Road, San Jose, CA 95193
R. H. Geiss
Affiliation:
IBM Research Division, 5600 Cottle Road, San Jose, CA 95193
M. Schlenker
Affiliation:
Laboratoire Louis Neel, CNRS/USMG, Grenoble, France
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Abstract

Thin films of Co-10 at% Pt, ranging from 15 to 90 nm in thickness, have been DC-sputtered at various temperatures on to carbon-coated mica, carbon substrates on copper grids, or (001) silicon single crystals under 3 μm pressure of Ar, using targets of the alloy in the hexagonal phase, at growth rates of 9 nm/min. The samples were investigated by TEM, using bright-and dark-field imaging, lattice imaging, selected area diffraction and both Fresnel and focussed Lorentz modes. The primary structure of the films was found to be hexagonal, with a = 0.255 nm and c = 0.414 nm. For the samples sputtered at room temperature, the grain sizes were on the order of 0.μm on carbon-coated mica and carbon-substrate grids, and approximately an order of magnitude smaller on silicon substrates. Heavy streaking along the [001] of the hexagonal matrix was observed on diffraction patterns for grains having the [001] parallel to the surface; this streaking was found to be associated with the presence of a high density of faults parallel to the (001). In films sputtered on to carbon-coated mica at 225 °C, where a substantial reduction of the coercivity is observed, the overwhelming majority of the grains had the (001) basal plane parallel to the surface. Lorentz microscopy showed the magnetic domain structure in films grown on silicon to be markedly different from those grown on the carbon substrates, and further changes occurred for the films grown at elevated temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 117
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Aboaf, J. A., Herd, S. R. and Klockholm, E., IEEE Trans. Magn. MAG–19, 1514 (1983).Google Scholar
2. McGuire, T. R., Aboaf, J. A. and Klockholm, E., J. Appl. Phys. 55, 1951 (1984).Google Scholar
3. Kitada, M. and Shimizu, N., J. Appl. Phys. 54, 7089 (1983).Google Scholar
4. Yanagisawa, M., Shiola, N., Yamaguchi, H. and Suganuma, Y., IEEE Trans. Magn. MAG–19, 1638 (1983).Google Scholar
5. Tutovanet, V. and Georgescu, V., Thin Solid Films 61, 133 (1979).Google Scholar
6. Jakubovics, J. P., Electron Micr. Matls. Sci., Part IV (Pub. by the Commission of the European Communities, Luxembourg, 1976), p.1303.Google Scholar
7. Guinier, A., X-Ray Diffraction, (W. H. Freeman Co.,San Francisco, 1963), p. 279–292.Google Scholar
8. Riedel, H., phys. stat. sol. (a) 24, 449 (1974).Google Scholar
9. Warren, B. E., X- Ray Diffraction, (Addison-Wesley, Menlo Park, CA, 1969), p. 298–303.Google Scholar
10. Guinier, A., X-Ray Diffraction, (W. H. Freeman Co., San Francisco, 1963), p. 226–233.Google Scholar