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Transient Photocurrent Measurements on Current-Stressed a-Si:H Schottky Diodes

Published online by Cambridge University Press:  15 February 2011

Andreas A. Buykx ,
M. Zeman ,
A. J. G. Spiekerman  and
J. W. Metselaar
Andreas A. Buykx
Affiliation:
Faculty of Electrical Engineering, ECTM group, Delft University of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands
M. Zeman
Affiliation:
Faculty of Electrical Engineering, ECTM group, Delft University of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands
A. J. G. Spiekerman
Affiliation:
Faculty of Electrical Engineering, ECTM group, Delft University of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands
J. W. Metselaar
Affiliation:
Faculty of Electrical Engineering, ECTM group, Delft University of Technology, P.O. Box 5031, 2600 GA Delft, The Netherlands
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Abstract

The characteristics of a-Si:H based switches, as used in liquid crystal displays, degrade as a result of current injection. To assess this degradation we investigated the effects of current injection on the electron mobility, lifetime and the built-in electric field profile in a-Si:H Schottky diodes.

We present steady-state current-voltage and transient photocurrent (TP) measurements on Mo and Pd a-Si:H Schottky diodes. The mobility, lifetime and electric field profile were determined from TP measurements. The electric field profile was calculated by fitting simulations from a non-linear model of the measurement to the measured TP currents.

The electron drift mobility is not affected by current stressing, the electron lifetime reduces slightly, the built-in voltage decreases significantly. The widths of the built-in fields of Schottky and ohmic back contact are reduced with approximately the same factor, corresponding with a spatially homogeneous increase of the defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 491
Copyright
Copyright © Materials Research Society 1995

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References

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