Skip to main content Accessibility help
×
Home

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

  • S. Heck (a1), P. Stradins (a1) and H. Fritzsche (a1)

Abstract

Dual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

Copyright

References

Hide All
1. Shklovskii, B. I., Fritzsche, H. and Baranovskii, S. D., in “Transport, Correlation and Structural Defects,” ed. Fritzsche, H. (World Scientific, Singapore 1990) p. 161.
2. Vollmar, H.-P., Botzler, P., Sachse, T.-U. and Bindemann, R., J. Non-Cryst. Solids, 164–166, 603 (1993).
3. Street, R. A. and Biegelsen, D. K., Solid State Commun. 44, 501 (1982).
4. Boulitrop, F., “Optical Effects in Amorph. Semicond” ed. by Taylor, P. C. and Bishop, S. G., AIP Conf. 120, 178 (1984).
5. Tran, M. Q., Stradins, P. and Fritzsche, H., Mat. Res. Soc. Symp. Proc. 336, 431 (1994).

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

  • S. Heck (a1), P. Stradins (a1) and H. Fritzsche (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed