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Transient Conductance Measurements During Pulsed Laser Annealing

Published online by Cambridge University Press:  15 February 2011

M. O. Thompson ,
G. J. Galvin ,
J. W. Mayer ,
R. B. Hammond ,
N. Paulter  and
P. S. Peercy
M. O. Thompson
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
G. J. Galvin
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
R. B. Hammond
Affiliation:
Los Alamos National Laboratories, Los Alamos, NM 87544
N. Paulter
Affiliation:
Los Alamos National Laboratories, Los Alamos, NM 87544
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Measurements were made of the conductance of single crystal Au-doped Si and silicon-on-sapphire (SOS) during irradiation with 30 nsec ruby laser pulses. After the decay of the photoconductive response, the sample conductance is determined primarily by the thickness and conductivity of the molten layer. For the single crystal Au-doped Si, the solid-liquid interface velocity during recrystallization was determined from the current transient to be 2.5 m/sec for energy densities between 1.9 and 2.6 J/cm2, in close agreement with numerical simulations based on a thermal model of heat flow. SOS samples showed a strongly reduced photoconductive response, allowing the melt front to be observed also. For complete melting of a 0.4 μm Si layer, the regrowth velocity was 2.4 m/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 209
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Baeri, P., Foti, G., Poate, J. M. and Cullis, A. G., Phys. Rev. Lett. 45, 2036 (1980).CrossRefGoogle Scholar
2. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).CrossRefGoogle Scholar
3. Van Vechten, J. A., Tsu, R., Saris, F. W. and Hoonhout, D., Phys. Lett. 74a, 417 (1979).Google Scholar
4. Galvin, G. J., Thompson, M. O., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., Phys. Rev. Lett. (accepted).Google Scholar
5. Gibson, A. F., Progress in Semiconductors (Heywood & Company, London 1960), pp. 258–259.Google Scholar
6. Auston, D. H., Golovchenko, J. A., Smith, P. R., Surko, C. M. and Venkatesan, T. N. C., Appl. Phys. Lett. 44, 604 (1980).Google Scholar
7. White, C. W., Pronko, P. P., Wilson, S. R., Appleton, B. R., Narayan, J. and Young, R. T., J. Appl. Phys. 50, 3261 (1979).Google Scholar
8. Peercy, P. S., to be published.Google Scholar