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Transient and modulated photoconductivity in microcrystalline silicon

Published online by Cambridge University Press:  21 March 2011

R. Brüggemann ,
C. Longeaud  and
J.P. Kleider
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 263111 Oldenburg. Germany
C. Longeaud
Affiliation:
L.G.E.P. -SUPELEC (CNRS. UMR 8507), 11 Rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
J.P. Kleider
Affiliation:
L.G.E.P. -SUPELEC (CNRS. UMR 8507), 11 Rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
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Abstract

We report on transient and modulated photoconductivity experiments with undoped michrystalline silicon in which access to density-of-states information is limited because the Fermi level results in occupancy of localised states in the energy range which is scanned. Simulation results show that a defect peak will be masked if most of the distribution is occupied because of the Fermi level position and the density-of-states determined from the experimental data is not an image of the true distribution. Another difficulty with obtaining reliable density-of-states distributions in microcrystalline silicon is the metastability of samples with respect ot adsorption of gases. If dark-conductivity changes are large upon heat treatment in vacuum, the modulated and transient photocurrent response are also affected to a large degree and the density-of-states profiles apart form being influenced by the Fermi level position thus also depend on the thermal history of the sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.8
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Bruggemann, R., Main, C., Berkin, J., Reynolds, S., Philos. Mag. B 62, 29 (1990).Google Scholar
2. Main, C., Bruggemann, R., Webb, D.P., Reynolds, S., Solid State Commun. 83, 401 (1992).Google Scholar
3. Zhong, F., Cohen, J.D., Mater. Res. Soc. Symp. Proc. 258, 813 (1992).Google Scholar
4. Longeaud, C., Kleider, J.P., Phys. Rev. B 48, 8715 (1993).Google Scholar
5. Hattori, K.et al., J. Appl. Phys. 76, 2841 (1994).Google Scholar
6. Main, C., J. Non-Cryst Solids 299–302, 525 (2000).Google Scholar
7. Main, C., MRS Symp. Proc. 467, 167 (1977).Google Scholar
8. Reynolds, S., Main, C., Webb, D.P., Rose, M.J., Philos.Mag. B 80, 547 (2000).Google Scholar
9. Brüggemann, R., Kleider, J.P., Longeaud, C., Mencaraglia, D., Guillet, J., Bourée, J.E., Niikura, C., J. Non-Crystal. Solids 266–269, 258 (2000).Google Scholar
10. Reynolds, S., Smimov, V., Main, C., Carius, R. and Finger, F., Mat. Res. Soc. Symp. Proc. 715, A21.2.1 (2002).Google Scholar
11. Veprek, S., Iqbal, Z., Kühne, R.O., Capezzuto, P., F-A. Sarott, Gimzewski, K., J. Phys. C: Solid State Phys. 16, 6241 (1983).Google Scholar
12. Smimov, V., Reynolds, S., Main, C., Finger, F., Carius, R., J. Non-Crystal. Solids, in print.Google Scholar
13. Brüggemann, R., J. Mat. Sciences Mat. Electronics 14, 639 (2003).Google Scholar
14. Brüggemann, R., Bronner, W., Hierzenberger, A., Schubert, M.B., Zrinscak, I., in Thin Film Materials and Devices–Developments in Science and Technology, edited by Marshall, J.M.et al. (World Scientific, Singapore, 1999), p. 1.Google Scholar
15. Schubert, M.B., Brüggemann, R., Bilger, G. and Hierzenberger, A., Proc 2nd World Conference on Photovoltaic Energy Conversion, Vienna, edited by Schmidt, J., Ossenbrink, H. A., Helm, P., Ehmann, H., Dunlop, E.D. (E.C. Joint Research Centre, Ispra, 1998), p. 834.Google Scholar
16. Smimov, V., Reynolds, S., Main, C., Carius, R. and Finger, F., MRS. Symp. Proc., this volume.Google Scholar
17. Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., Gunes, M., IEE Proc. Circuits Devices and Systems 150, 300 (2003).Google Scholar
18. Brüggemann, R., Main, C., Bauer, G.H., MRS Symp. Proc. 258, 693 (1992).Google Scholar
19. Brüggemann, R., Kleider, J.P., Thin Solid Films 403–404, 30 (2002).Google Scholar
20. Brüggemann, R., Phys. status solidi (c) 1, 1227 (2004).Google Scholar