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Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy

  • M. Masi (a1), G. Radaelli (a1), N. Roda (a1), P. Raimondi (a1), S. Carra (a1), G. Vaccari (a2) and D. Crippa (a2)...

Abstract

In this work, the epitaxial silicon deposition by SiHCl3-hydrogen mixtures in a AMT 7700 barrel reactor was analyzed through a detailed model where a three dimensional flow dynamic was solved by reduction to a two dimensional geometry under cylindrical coordinates. The model was used to investigate the role of the reactor geometry and of the process parameters on the axial deposition uniformity. A comparison with industrial experimental data was also performed.

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Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy

  • M. Masi (a1), G. Radaelli (a1), N. Roda (a1), P. Raimondi (a1), S. Carra (a1), G. Vaccari (a2) and D. Crippa (a2)...

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