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Towards Microcrystalline Silicon n-i-p Solar Cells with 10% Conversion Efficiency

Published online by Cambridge University Press:  01 February 2011

L. Feitknecht ,
C. Droz ,
J. Bailat ,
X. Niquille ,
J. Guillet  and
A. Shah
L. Feitknecht
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
C. Droz
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
J. Bailat
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
X. Niquille
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
J. Guillet
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchatel, Breguet 2, CH-2000 Neuchatel, Switzerland.
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Abstract

High-performance microcrystalline and amorphous silicon solar cells are the key elements for a successful combination to form the “micromorph” tandem cell [1,2]. A microcrystalline silicon (μc-Si:H) solar cell in the n-i-p configuration was fabricated by the VHF PE-CVD deposition process. The cell has a conversion efficiency exceeding 9% (VOC=520 mV, FF=73%, JSC=24.2 mA/cm2). This result was achieved by a successful combination of the following elements: first a fine-tuning of the silane concentration (SC) in hydrogen feedstock gas used for deposition of the intrinsic <i> absorber layer, second, the incorporation of an optimised back-reflecting substrate into the cell; and, third, the ideal combination of each of these key-components.

Compared to earlier results with n-i-p-type μc-Si:H solar cells, a substantial increase in VOC was now obtained, while maintaining reasonable JSC-values. Earlier investigations on the role of the i-layer material had revealed a trade-off between cells with high JSC but low VOC or cells of low JSC and high VOC. In the present contribution the authors now show the successful combination of a cell with an acceptable VOC and good JSC generation in the long-wavelength region (above 700 nm). This is mainly because of suitable light-diffusing back-reflectors which perform well with respect to both, optical and electrical aspects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A13.5
Copyright
Copyright © Materials Research Society 2003

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References

1. Feitknecht, L., Kluth, O., Ziegler, Y., Niquille, X., Torres, P., Meier, J., Wyrsch, N., A. Shah. Sol. En. Mat. & Solar Cells, Vol. 66, 2001, pp. 397–403.Google Scholar
2. Meier, J., Dubail, S., Golay, S., Kroll, U., Faÿ, S., Vallat-Sauvain, E., Feitknecht, L., Dubail, J., Shah, A., Sol. En. Mat. & Solar Cells, Vol. 74, 2002, pp. 457-467.Google Scholar
3. Fujiwara, H., Kondo, M., Matsuda, A., J. Appl. Phys., 93 (5): 2400–2409 MAR 1 2003 Google Scholar
4. Bailat, J., E. Vallat-Sauvain, Feitknecht, L., Droz, C., Shah, A., ICAMS 2001, Nice, France, 2001, J. Non-Crystalline Solids Vol. 299-302, pp. 1219–1223.Google Scholar
5. Torres, P. et al., Appl. Phys. Lett. 69 (10) 1996 p. 1373 Google Scholar
6. Bailat, J., E. Vallat-Sauvain, Feitknecht, L., Droz, C. and Shah, A.. J. Appl. Phys., Vol. 93, No. 9, 1 May 2003 Google Scholar
7. Nasuno, Y., Kondo, M. and Matsuda, A., Jpn. J. Appl. Phys. Vol. 40 (2001) L303–L305, Part 2, No. 4A, 1 April 2001 Google Scholar
8. Platz, R., Wagner, S., Hof, C., Shah, A. et al., J. Appl. Phys. 84 (7): 3949–3953 OCT 1 1998 Google Scholar