Skip to main content Accessibility help
×
Home

Towards an All-Hot-Wire TFT: Silicon Nitride and amorphous Silicon deposited by Hot-Wire Chemical Vapor Deposition

  • B. Stannowski (a1), M.K. van Veen (a1) and R.E.I. Schropp (a1)

Abstract

We present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.

Copyright

References

Hide All
1. Matsumura, H., Jpn. J. Appl. Phys. 37, 3175 (1998).10.1143/JJAP.37.3175
2. Nelson, B.P., Iwaniczko, E., Mahan, A.H., Wang, Q., Xu, Y., Crandall, R.S., Branz, H.M., Proc. First Int. Conf. on Cat-CVD (Hot-Wire CVD) Process, Kanazawa, Japan, 291294 (2000).
3. Ledermann, A., Weber, U., Mukherjee, C., Schroeder, B., as Ref. 2, 5154 (2000).
4. Meiling, H., Schropp, R.E.I., Appl. Phys. Lett. 70, 2681 (1997).
5. Stannowski, B., Nascetti, A., Schropp, R.E.I., Appl. Phys. Lett. 75, 3674 (1999).
6. Stannowski, B., Rath, J.K., Schropp, R.E.I., as Ref. 2, 265268 (2000).
7. Okada, S., Matsumura, H., Jpn. J. Appl. Phys. 36, 7035 (1997).
8. Deshpande, S.V., Dupuie, J.L., Gulari, E., Appl. Phys. Lett. 61, 1420 (1992).
9. Sakai, M., Tsutsumi, T., Yoshioka, T., Matsuda, A., Matsumura, H., as Ref. 2, 311314 (2000).
10. Schropp, R.E.I., Feenstra, K.F., Molenbroek, E. C., Meiling, H., Rath, J. K., Philos. Mag. B 76, 309 (1997).
11. Feenstra, K.F., Schropp, R.E.I., Weg, W.F. van der, J. Appl. Phys. 85, 6843 (2000).
12. Veen, M.K. van, Schropp, R.E.I., this proceedings.
13. Robertson, J., Powell, M.J., Appl. Phys. Lett. 44, 415 (1983).
14. Robertson, J., Philos. Mag. B 63, 47 (1991).
15. Devlin, J.P., Joyce, C., Buch, V., J. Phys. Chem A 104, 1974 (2000).
16. Liao, W.-S., Lin, C.-H., Lee, S.-C., Appl. Phys. Lett 65, 2229 (1994).
17. Dupuie, J.L., Gulari, E., Terry, F., J. Electrochem. Soc. 139, 1151 (1992).10.1149/1.2069356
18. Sze, S.M., in Physics of Semiconductor Devices, 2nd edition (Wiley, New York, 1981).
19. Yokoyama, S., Kajihara, N., Hirose, M., Osaka, Y., J. Appl. Phys 51, 5470 (1980).10.1063/1.327505
20. Maeda, M., Arita, Y., J. Appl. Phys 53, 6852 (1982).10.1063/1.330024
21. Nicollian, E.H., Brews, J.R., in MOS (Metal Oxide Semiconductor) - Physics and Technologie, 1st edition (Wiley, New York, 1982).
22. Stannowski, B., Schropp, R.E.I., Thin Solid Films 383, 125 (2001).
23. Doyle, J., Robertson, R., Lin, G.H., He, M.Z., Gallager, A., J. Appl. Phys. 64, 3215 (1988).
24. Brockhoff, A.M., Weg, W.F. van der, Habraken, F.H.P.M., J. Appl. Phys. 89, 2993 (2001). A.M. Brockhoff, PhD thesis, Utrecht, the Netherlands (2001).10.1063/1.1342807

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed