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Titanium Nitride Epitaxy on Tungsten (100) by Sublimation Crystal Growth

Published online by Cambridge University Press:  01 February 2011

Lisa Mercurio ,
James H. Edgar ,
Li Du  and
E. A. Kenik
Lisa Mercurio
Affiliation:
Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
James H. Edgar
Affiliation:
edgarjh@ksu.edu, Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
Li Du
Affiliation:
lidu@ksu.edu, Kansas State University, Chemical Engineering, Durland Hall, Manhattan, KS, 66506-5102, United States
E. A. Kenik
Affiliation:
kenikea@ornl.gov, Oak Ridge National Laboratory, 1 Bethel Valley Rd, Oak Ridge, TN, 37831-6064, United States
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Abstract

Titanium nitride crystals were grown from titanium nitride powder on tungsten by the sublimation-recondensation technique. The bright golden TiN crystals displayed a variety of shapes including cubes, truncated tetrahedrons, truncated octahedrons, and tetrahedrons bounded by (111) and (100) crystal planes. The TiN crystals formed regular, repeated patterns within individual W grains that suggested epitaxy. X-ray diffraction and electron backscattering diffraction revealed that the tungsten foil was highly textured with a preferred foil normal of (100) and confirmed that the TiN particles deposited epitaxially with the orientation TiN(100)‖W(100) and TiN[100]‖W[110], that is, the unit cells of the TiN crystals were rotated 45° with respect to the tungsten. Because of its larger coefficient of thermal expansion compared to W, upon cooling from the growth temperature, the TiN crystals were under in-plane tensile strain, causing many of the TiN crystals to crack.

Keywords

crystal growthepitaxynitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-11
Copyright
Copyright © Materials Research Society 2007

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