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TiSi2 Integrity within a Doped Silicide Process Step

Published online by Cambridge University Press:  25 February 2011

G. M. Crean ,
P. D. Cole  and
J. Stoemenos
G. M. Crean
Affiliation:
National Microelectronics Research Center, Lee Makings, Prospect Row, Cork, Ireland.
P. D. Cole
Affiliation:
National Microelectronics Research Center, Lee Makings, Prospect Row, Cork, Ireland.
J. Stoemenos
Affiliation:
Physics Department, University of Thessaloniki, Thessaloniki, Greece.
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Abstract

Degradation of arsenic implanted titanium suicide (TiSi2) thin films as a result of thermal processing for shallow junction formation is investigated. Significant arsenic diffusion from the suicide overlayer into the silicon substrate has been detected by Rutherford Backscattering Spectrometry at drive-in temperatures > 1050°C. Cross-sectional transmission electron micrographs have shown the suicide film become increasingly non-uniform as the thermal budget increases, ultimately leading to discontinuities forming in the suicide film. This observed degradation of the titanium suicide film is also supported by sheet resistance measurements which show the film to degrade significantly above a threshold thermal budget

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 307
Copyright
Copyright © Materials Research Society 1993

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References

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