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Tin Dioxide Films Prepared by a Rapid Chemical Vapor Deposition Method

Published online by Cambridge University Press:  15 February 2011

Junichi Nishino ,
Shigeo Ohshio ,
Hidetoshi Saitoh  and
Kiichiro Kamata
Junichi Nishino
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, JAPAN
Shigeo Ohshio
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, JAPAN
Hidetoshi Saitoh
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, JAPAN
Kiichiro Kamata
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, JAPAN
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Abstract

A rapid chemical vapor deposition method was studied for the preparation of tin dioxide films. The films were prepared under atmospheric-pressure on fused quartz and Si substrates at 200° to 600°C using bis(2,4-pentanedionato)tin as a source material. SnO2 films obtained at 300° to 600°C had polycrystalline rutile structures, while the film deposited at 200°C was amorphous judging from the XRD patterns. The deposition rate of SnO2 increased with increasing substrate temperature and vaporization temperature of the source material. The maximum deposition rate was 440 nm min−1. The transmittance of SnO2, deposited at Ts = 600°C, was more than 70% in the wavelength range 400–800 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 225
Copyright
Copyright © Materials Research Society 1995

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