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Time-Resolved Reflectivity Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell

Published online by Cambridge University Press:  26 February 2011

G. Q. Lu ,
E. Nygren ,
M. J. Aziz ,
D. Turnbull  and
C. W. White
G. Q. Lu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
E. Nygren
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
M. J. Aziz
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831.
D. Turnbull
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831.
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Abstract

We have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique [1] in a hightemperature and high-pressure diamond anvil cell (DAC). With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed in the DAC provides a uniform temperature across the sample. At temperatures in the range of 530 – 550 °C and pressure up to 50 kbars (5 GPa), the growth rate is enhanced by up to a factor of ten over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.0 cm3/mole (−27% of the atomic volume). These preliminary results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [2], who found an activation volume of −8.7 cm3/mole. The implications of these results for the nature of the defect responsible for thermal SPEG and irradiation enhanced SPEG is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 435
Copyright
Copyright © Materials Research Society 1988

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References

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