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Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys

Published online by Cambridge University Press:  21 February 2011

E.Z. Liu ,
D. Pang ,
W. Paul  and
J.H. Chen
E.Z. Liu
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
D. Pang
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
W. Paul
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
J.H. Chen
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
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Abstract

We report TOF measurements on high quality intrinsic a-Ge:H and a-SiGe:H films of E04=1–4.eV in temperature ranges of 200 to 280 and 230 to 300K, respectively. Complete charge collection is achieved in all measurements. For a-Ge:H films, the (μτ)e product obtained from the Hecht plot is (5±3)×10-8 cm2/V above 240K and decreases at lower temperatures. The electron transit signal is dispersive at all temperatures. The a obtained from ttV-1/αis 0.23 at 200K and approaches 1.0 at 260K. The electron drift mobility μd shows activated behavior, with an energy of 0.37±0.05eV, and has an extrapolated room temperature value of 0.03 cm2/Vs. Compared to a-Ge:H, μd of a-SiGe:H alloy samples is lower by one order of magnitude but has a similar activation energy. These results are consistent with a band tail hopping transport model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 529
Copyright
Copyright © Materials Research Society 1992

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References

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