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Time Resolved Transmission and Reflectivity of Pulsed Ruby Laser Irradiated Silicon*

Published online by Cambridge University Press:  15 February 2011

Douglas H. Lowndes ,
G. E. Jellison JR.  and
R. F. Wood
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. E. Jellison JR.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

The time resolved optical transmission, T (atλ = 1152 nm), and reflectivity, R (at 633 nm and 1152 nm), have been measured for n-type single crystalline silicon (c-Si) during and immediately after pulsed ruby laser irradiation (λ = 693 nm, FWHM pulse duration 14 nsec), for a range of pulsed laser energy densities, El. The T is found to go to zero, and to remain at zero, for a period of time that increases with increasing El, in apparent disagreement with earlier measurements elsewhere that used semi-insulating Si and a different pulsed laser wavelength. Measured reflectivities during the high R phase agree within experimental error with reflectivities calculated from the optical constants of molten Si. Quantitative agreement is also found between both our T and R measurements and detailed time– and El-dependent results of thermal melting model calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 73
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with the Union Carbide Corporation.

References

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