Hostname: page-component-84b7d79bbc-c654p Total loading time: 0 Render date: 2024-07-26T08:50:30.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

Published online by Cambridge University Press:  28 February 2011

O. Bostanjoglo ,
F. E. Endruschat  and
W. Tornow
O. Bostanjoglo
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
F. E. Endruschat
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
W. Tornow
Affiliation:
Optisches Institut, Technische Universität Berlin, Strasse des 17. Juni 135 1000 Berlin 12, Federal Republic of Germany
Get access

Abstract

This paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 345
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Learn, A. J. and Forster, D. W., J. Appl. Phys., 58(5), 1 (1985).Google Scholar
2. Murarka, S. P., J. Vac. Sci. Technol., 17, 775 (1980).CrossRefGoogle Scholar
3. Crowder, B. L. and Zirinsky, S., IEEE Trans. Electron Devices, Ed–26, 369 (1979).CrossRefGoogle Scholar
4. Nicolet, M.-A., Thin Solid Films, 52, 415 (1978).Google Scholar
5. Krusin-Elbaum, L., Wittmer, M., Ting, C. Y. and Cuomo, J. J., Thin Solid Films, 104, 81 (1983).CrossRefGoogle Scholar
6. Wittmer, M., Noser, J. R. and Melchior, H., J. Appl. Phys. 54 (3), 1423 (1983).Google Scholar
7. Pauw, L. J. Van der, Philips Res. Reports, B, 1 (1958).Google Scholar
8. Krusin-Elbaum, L., Ahn, K., Souk, J. H., Ting, C. Y. and Nesbit, L. A., (to be published, 1986).Google Scholar
9. Samsonov, G. V., Sov. Phys.- Tech. Phys.,1, 695 (1967).Google Scholar
10. Sze, S. M., Physics of Semiconductor Devices, (Wiley, New York, 1981).Google Scholar
11. Ito, T., Nakamura, T. and Ishikawa, H., J. Electrochem. Soc., 129, 184 (1982).CrossRefGoogle Scholar