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Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

Published online by Cambridge University Press:  21 February 2011

Xuelong Cao ,
Ahn Goo Choo ,
L. M. Smith ,
Howard E. Jackson ,
P. Chen  and
A. J. Steckl
Xuelong Cao
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011
Ahn Goo Choo
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011
L. M. Smith
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011
P. Chen
Affiliation:
Department of Electrical and Computer Engineering University of Cincinnati, Cincinnati, OH 45221-0030
A. J. Steckl
Affiliation:
Department of Electrical and Computer Engineering University of Cincinnati, Cincinnati, OH 45221-0030
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Abstract

Temporally and spatially resolved photoluminescence has been used to study patterned structures prepared by focused ion beam (FIB) implantation of multiple quantum wells (MQWs) followed by rapid thermal annealing (RTA). Exciton lifetimes at different positions across the interface between implanted and unimplanted regions suggest that the interface between these two regions is of good quality. Anisotropic exciton diffusion is also observed, suggesting that these structures provide lateral confinement for excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 531
Copyright
Copyright © Materials Research Society 1994

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References

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