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Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures
Published online by Cambridge University Press: 21 February 2011
Abstract
Temporally and spatially resolved photoluminescence has been used to study patterned structures prepared by focused ion beam (FIB) implantation of multiple quantum wells (MQWs) followed by rapid thermal annealing (RTA). Exciton lifetimes at different positions across the interface between implanted and unimplanted regions suggest that the interface between these two regions is of good quality. Anisotropic exciton diffusion is also observed, suggesting that these structures provide lateral confinement for excitons.
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- Copyright © Materials Research Society 1994
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