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Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures

Published online by Cambridge University Press:  28 February 2011

J.P. Bergman ,
Q.X. Zhao ,
P.-O. Holtz ,
B. Monemar ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology Linköping University. S-58183 Linköping SWEDEN.
Q.X. Zhao
Affiliation:
Department of Physics and Measurement Technology Linköping University. S-58183 Linköping SWEDEN.
P.-O. Holtz
Affiliation:
Department of Physics and Measurement Technology Linköping University. S-58183 Linköping SWEDEN.
B. Monemar
Affiliation:
Department of Physics and Measurement Technology Linköping University. S-58183 Linköping SWEDEN.
M. Sundaram
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
A.C. Gossard
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
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Abstract

The radiative recombination of two-dimensional (2D) carriers in an n-channel GaAs/AIGaAs heterojunction has been studied with time resolved photoluminescence (PL). Two bands related to the recombination of 2D carriers, the so called H-band 1 (HB1) and H-band 2 (HB2), are observed in PL. The spectral shape and position is strongly dependent on the sample and the experimental conditions. The H-bands are e.g. found to shift within a large energy range with the excitation intensity. We report here on the dependence of the decay times of the H-bands on their spectral position. The results are consistent with a recombination process involving 2D electrons, confined in the interface notch, and three-dimensional (3D) holes either from the valence band (HB1) or from neutral acceptors (HB2) in the active GaAs layer. The decay times of HB1 are found to vary in the range of 2-100 ns, while the corresponding decay times of HB2 are in the range of 100 ns - 10 µs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 703
Copyright
Copyright © Materials Research Society 1990

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