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Three-Dimensional Active Gratings for Light Emission Control

Published online by Cambridge University Press:  15 February 2011

S. G. Romanov ,
A. Fokin ,
V. Butko ,
N. P. Johnson  and
C. M. Sotomayor Torres
S. G. Romanov
Affiliation:
A.F. Ioffe Physical Technical Institute, St. Petersburg, 194021, Russiaromanov @ nanosys.ioffe.rssi.ru
A. Fokin
Affiliation:
A.F. Ioffe Physical Technical Institute, St. Petersburg, 194021, Russiaromanov @ nanosys.ioffe.rssi.ru
V. Butko
Affiliation:
A.F. Ioffe Physical Technical Institute, St. Petersburg, 194021, Russiaromanov @ nanosys.ioffe.rssi.ru
N. P. Johnson
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK. njohnson@elec.gla.ac.uk
C. M. Sotomayor Torres
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK. njohnson@elec.gla.ac.uk
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Abstract

Three dimensional lattices of semiconductor nanostructures were prepared using porous artificial opals as templates. Opals are natural gratings for visible light, and the template forces the semiconductor to follow the size (typically 100 nm) and symmetry (fcc) of their void-like lattice. The purpose of using this material is to match the wavelength of the emitted light from the semiconductor component with one of the lattice's own modes to enhance the luminescence efficiency. TiO2 was grown using in-cavity, multiple step synthesis by CVD. The band gap of the composite is near 3 eV. Raman scattering, absorption and photoluminescence (PL) spectra were examined for various amounts of TiO2 in opal. Transmission of the PL through the composite shows an intensity decrease at 2.15 eV which is not in the region of interband absorption of composite components. This corresponds to the structure possessing an overall refractive index between that of opal (1.45) and rutile (2.3) of 1.8.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 289
Copyright
Copyright © Materials Research Society 1996

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