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Thin-Film Reactive Interdiffusion in The TI-AL System

Published online by Cambridge University Press:  21 February 2011

P. Maugis ,
G. Blaise  and
J. Philibert
P. Maugis
Affiliation:
Laboratoire de Physique des Solides, Université Paris XI, 91405 Orsay, France
G. Blaise
Affiliation:
Laboratoire de Physique des Solides, Université Paris XI, 91405 Orsay, France
J. Philibert
Affiliation:
Laboratoire de Metallurgie Structurale, Université Paris XI, 91405 Orsay, France
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Abstract

We have studied the thermodynamics and kinetics of growth of Al-Ti phases in thin-film interdiffusion couples, A lOOnm thick aluminum layer is vapor-deposited on a poly- or single-crystal titanium substrate, previously etched by ion bombardment. The sample is then annealed during a time ranging from a few minutes to a few hours, at temperatures from 300 to 600°C. The Al atomic fraction vs depth is determined using a sputtering technique, associated with thermo-ionization mass spectrometry (STIMS). At low temperature (300–450°C), titanium diffuses along the grain boundaries of the micro-crystalline aluminum layer, to form an Al-rich phase. At higher temperature (450–500°C), the T1AI3 phase grows rapidly up to the surface. Above 460°C, an intermediate Ti-72at/Al phase grows between TiAl3 and Ti‥ At 600°C, the aluminum layer becomes morphologically unstable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 679
Copyright
Copyright © Materials Research Society 1992

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References

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