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Thin Film Transistors Made From Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

K. C. Wang ,
B. Y. Chen ,
K. C. Hsu ,
T. R. Yew  and
H. L. Hwang
K. C. Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
B. Y. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
T. R. Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
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Abstract

Microcrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250°C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap Measurements. One-Mask a-Si:H thin film transistors (TFT's) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm2/V•s, respectively without any thermal treatment steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 737
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1]. Staebler, D.L. and Wronski, C. R., J. Appl. Phys. 51 (1980) 3262.Google Scholar
[2]. Pankove, J.I. and Berkeyheiser, J.E., Appl. Phys. Lett. 37 (1980) 705.Google Scholar
[3]. Dersch, H., Stuke, J., and Beicher, J., Appl. Phys. Lett. 38 (1981) 456.Google Scholar
[4]. Elliolt, S.R., Philos. Mag. B 39 (1979) 349.Google Scholar
[5]. Hayashi, S., J. Non. Cryst. Solid 59&60 (1983) 779.Google Scholar
[6]. Tsai, C.C., Anderson, B., Thompson, R., MRS Symp. Proc., 192 (1990) 475.Google Scholar
[7]. Wang, K.C., Yew, T.R., Hwang, H.L., MRS Symp. Proc., 1993 impress.Google Scholar