Skip to main content Accessibility help
×
Home

Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

  • C. Ronning (a1), E. Dreher (a1), H. Feldermann (a1), M. Sebastian (a1), J. Zweck (a2), R. Fischer (a2) and H. HofsÄss (a1)...

Abstract

We have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

Copyright

References

Hide All
1. Hofsäss, H., Binder, H., Klumpp, T. and Recknagel, E., Diam. Relat. Mater. 3, 137(1994).
2. Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Mater. Res. Soc. Proc. Vol. 354 (1995) 93; and this conference contribution A8.4.
3. Hofsäss, H., Ronning, C., Griesmeier, U., Gross, M., Reinke, S., and Kuhr, M., Appl. Phys. Lett. 67, 46 (1995); Nucl. Instr. & Meth. B 106, 153 (1995).
4. Qin, F., Wang, X., Liu, Z., Yao, Z., Ren, Z., Lin, L., Su, S., Jiamg, W., and Lau, W.M., Rev. Sci. Instrum. 62, 2322 (1991).
5. Bello, I., Lau, W.M., Lawson, R.P.W., and Foo, K.K., J. Vac. Sci. Technol. A 10, 1642 (1992).
6. Shinar, R., J. Vac. Sci. Technol. A 10, 137 (1992).
7. Doolittle, L.R., Nucl. Inst. & Methr. B 15, 227 (1986).
8. Corczyca, I., Christensen, N.E., Peltzer, E.L. and Rodriguez, C.O., Phys. Rev. B 51, 11936 (1995).
9. Vispute, R.D., Narayan, J., Wu, H. and Jagannadham, K., J. Appl. Phys. 77, 4724 (1995).
10. Weeks, T.W., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).
11. Phillips, J. C., Rev. Mod. Phys. 42, 317 (1970), Bonds and Bands in Semiconductors (Academic, New York, 1973).
12. Sachdev, H., Haubner, R., Lux, B., and Nüth, H., Diam. & Rel. Mater. 6 (1997) to be published.
13. Bohr, S., Haubner, R., and Lux, B., Diam. Relat. Mater. 4, 714 (1995).
14. Hofsäss, H., Feldermann, H., Sebastian, M., and Ronning, C., submitted to Phys. Rev. Lett..
15. Reinke, S., Kuhr, M., and Kulisch, W., Diam. Relat. Mater. 4, 272 (1995).
16. Kester, D.J., and Messier, R., J. Appl. Phys. 72, 504 (1992).
17. Lifshitz, Y., Kasi, S.R., and Rabalais, J.W., Phys. Rev. Lett. 62, 1290 (1989).
18. Hofsäss, H. and Ronning, C., in: Proc. 2nd Int. Conf. on Beam Processing of Advanced Materials, edited by Singh, J., Copley, S.M., Mazumder, J., (ASM International, Materials Park, 1996) p. 2956.
19. Mirkarimi, P.B., Medlin, D.L., McCarty, K.F., and Barbour, J.C., Appl. Phys. Lett. 66, 2813 (1995).
20. Ronning, C., Dreher, E., Feldermann, H., Gross, M., Sebastian, M., and Hofsass, H., Diam. & Relat. Mater. 6 (1997), to be published.
21. Kester, D.J., Ailey, K.S., Davis, R.F., and More, K.L., Mater, J.. Res. 8, 1213 (1993).

Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

  • C. Ronning (a1), E. Dreher (a1), H. Feldermann (a1), M. Sebastian (a1), J. Zweck (a2), R. Fischer (a2) and H. HofsÄss (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed