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Thin and Smooth Cu Seed Layer Deposition using the Reduction of Low Temperature Deposited Cu2O

Published online by Cambridge University Press:  01 February 2011

Hoon Kim ,
Yasuhiko Kojima ,
Hiroshi Sato ,
Naoki Yoshii ,
Shigetoshi Hosaka  and
Yukihiro Shimogaki
Hoon Kim
Affiliation:
kimhoon1@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan, +81-3-5841-7131, +81-3-5841-7131
Yasuhiko Kojima
Affiliation:
yasuhiko.kojima@tel.com, Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi, 407-0291, Japan
Hiroshi Sato
Affiliation:
hiroshi.sato@tel.com, Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi, 407-0291, Japan
Naoki Yoshii
Affiliation:
Naoki.yoshii@tel.com, Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi, 407-0291, Japan
Shigetoshi Hosaka
Affiliation:
Shigetoshi.hosaka@tel.com, Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi, 407-0291, Japan
Yukihiro Shimogaki
Affiliation:
shimo@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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Abstract

Thin and continuous CVD Cu seed layer was successfully deposited on Ru under-layer by Cu oxide deposition and reduction method at 100°C with novel chemistry. Cu oxide was formed with Cu(hface)TMVS and H2O2 at 100°C, and this film was reduced with formic acid at 100°C. Deposited Cu oxide films were Cu2O that was confirmed by XRD and XPS. The morphology of oxide films showed smooth and continuous on Ru and Ta substrate. The reduced Cu film on Ru maintained good surface morphology, and no impurity was detected not only in the Cu film but also the interface between Cu and Ru. However, that on Ta had poor morphology by agglomeration of Cu film during reduction due to poor Cu wettability on oxidized Ta that was oxidized during oxide deposition. The readiness of reduction is very important merit of using Ru under-layer for this oxide deposition and reduction process. The oxide deposition and reduction method on Ru under-layer can be a promising candidate for thin and continuous seed layer deposition method.

Keywords

Cuchemical vapor deposition (CVD) (deposition)Ru
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F05-11
Copyright
Copyright © Materials Research Society 2006

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