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Thickness Effect On The Crystallization Kinetics Of Electrolessly-Deposited Ni(P) Thin Films

Published online by Cambridge University Press:  15 February 2011

L. T. Shi  and
E. J. M. O'Sullivan
L. T. Shi
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, NY 10598
E. J. M. O'Sullivan
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

In order to understand thickness and interfacial effects on the crystallization kinetics of amorphous solids, Ni(P) thin films electrolessly deposited on Cu seed layers were annealed at constant heating rates or at constant temperatures in a DSC to obtain activation energies andAvrami exponents. It was found that the activation energy of crystallization in Ni(P) changes asa function of sample thickness when the sample thickness is less than 1.0 μm. Furthermore, the Avrami exponent was found to change not only as a function of thickness but also as a function of annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 319
Copyright
Copyright © Materials Research Society 1994

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References

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