Skip to main content Accessibility help
×
Home

Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

  • Kazuhide Abe (a1) and Shuichi Komatsu (a1)

Abstract

Ba0.44Sr0.56TiO3 (BST) thin films with various thicknesses were epitaxially grown on Pt/MgO(100) substrates with rf magnetron sputtering. The thickness dependence of lattice constant, D-E hysteresis and dielectric constant were evaluated for the BST films. The lattice constant in the thickness direction is elongated through the thickness range (33 to 221 nm), whereas the ferroelectric and the dielectric properties had strong thickness dependencies. The mechanism of the induced ferroelectricity is discussed in terms of the thickness dependence and deposition technique.

Copyright

References

Hide All
1. Miyasaka, Y. and Matsubara, S., Proc. 7th Int. Symp. Appl, of Ferroelectrics 1990 (IEEE, New Jersey, 1991) p. 121.
2. Horikawa, T., Mikami, N., Makita, T., Tanimura, J., Kataoka, M., Sato, K. and Nunoshita, M., Jpn. J. Appl. Phys. 32, 4126 (1993).
3. Abe, K. and Komatsu, S., to be published in J. Appl. Phys.
4. Abe, K. and Komatsu, S., Jpn. J. Appl. Phys. 31 2985 (1992).
5. McQuarrie, M., J. Am. Ceram. Soc. 38 444 (1955).
6. Iijima, K., Yano, Y., Terashima, T. and Bando, Y., Oyo-Butsuri, 62, 1250 (1993) in Japanese.
7. Terauchi, H., Watanabe, Y., Kasatani, H., Kamigaki, K., Yano, Y., Terashima, T. and Bando, Y., J. Phys. Soc. Jpn. 61 2194 (1992).
8. Abe, K. and Komatsu, S., Jpn. J. Appl. Phys. 33 5297 (1994).

Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

  • Kazuhide Abe (a1) and Shuichi Komatsu (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed