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Thermomechanical behavior and microstructural evolution in tantalum thin films

Published online by Cambridge University Press:  01 February 2011

Robert Knepper ,
Katherine Jackson ,
Blake Stevens  and
Shefford P. Baker
Robert Knepper
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
Katherine Jackson
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
Blake Stevens
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
Shefford P. Baker
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
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Abstract

Ta films were prepared in the metastable β phase using an ultra-high vacuum sputter deposition system. The stresses that arose during thermal cycles to 750°C were measured using an in situ substrate curvature measurement system, allowing oxygen content in the films to be minimized. A phase transformation from β to the stable α phase takes place in conjunction with distinct “jumps” in stress in the tensile direction during heating at approximately 400°C and 650°C. X-ray and electron backscatter diffraction (EBSD) analyses were used to determine grain sizes, along with crystal phase and orientation information. These results indicate a significant amount of grain growth accompanying the phase transformation. It is found that the measured total stress change is in reasonable agreement with that predicted by the combination of grain growth, crystal densification associated with the phase transformation, and stress relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U6.8
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Ino, K., Shinohara, T., Ushiki, T., and Ohmi, T., J. Vac. Sci. Technol. A 15, 2627 (1997).Google Scholar
2. Catania, P., Roy, R.A., and Cuomo, J.J., J. Appl. Phys. 74, 1008 (1993).Google Scholar
3. Hoogeveen, R., Moske, M., Geisler, H., and Samwer, K., Thin Solid Films 275, 203 (1996).Google Scholar
4. Feinstein, L.G. and Huttemann, R.D., Thin Solid Films 16, 129 (1973).Google Scholar
5. Westwood, W.D. and Livermore, F.C., Thin Solid Films 5, 407 (1970).Google Scholar
6. Kondo, K., Nakabayashi, M., Kawakami, K., Chijimatsu, T., Nakaishi, M., Yamada, M., Yamabe, M., and Sugishima, K., J. Vac. Sci. Technol. A 11, 3067 (1993).Google Scholar
7. Cabral, C. Jr, Clevenger, L.A., and Schad, R.G., J. Vac. Sci. Technol. B 12, 2818 (1994).Google Scholar
8. Clevenger, L.A., Mutscheller, A., Harper, J.M.E., Cabral, C. Jr, and Barmak, K., J. Appl. Phys. 72, 4918 (1992).Google Scholar
9. Wuu, D.S., Chan, C.C., Horng, R.H., Lin, W.C., Chiu, S.L., and Wu, Y.Y., Applied Surface Science 144–145, 315 (1999).Google Scholar
10. Wuu, D.S., Lee, M.L., and Lin, T.Y., Applied Surface Science 92, 626 (1996).Google Scholar
11. Liu, L., Gong, H., Wang, Y., Wang, J., Wee, A.T.S., and Liu, R., Materials Science and Engineering C 16, 85 (2001).Google Scholar
12. Shu, J.B., Ph.D. Dissertation, Cornell University, Ithaca, NY (2003).Google Scholar
13. Stoney, G., Proceedings of the Royal Society of London A82, 172 (1909).Google Scholar
14. Jackson, K., Knepper, R., and Baker, S.P., (unpublished).Google Scholar
15. Jiang, A., Yohannan, A., Nnolim, N.O., Tyson, T.A., Axe, L., Lee, S.L., and Cote, P., Thin Solid Films 437, 116 (2003).Google Scholar
16. Mosely, P.T. and Seabrook, C.J., Acta Cryst. B29 1170 (1973).Google Scholar
17. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface and Thin Film Analysis (Prentice Hall, Upper Saddle, NJ, 1986).Google Scholar