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Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

Published online by Cambridge University Press:  01 February 2011

Tsunehiro Takeuchi ,
Toshio Otagiri ,
Hiroki Sakagami  and
Uichiro Mizutani
Tsunehiro Takeuchi
Affiliation:
Research Center for Advanced Waste and Emission Management, Nagoya University, Nagoya 464–8603, Japan
Toshio Otagiri
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, Japan
Hiroki Sakagami
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, Japan
Uichiro Mizutani
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, Japan
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Abstract

The electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 805: Symposium LL – Quasicrystals , 2003 , LL3.3
Copyright
Copyright © Materials Research Society 2004

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References

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