Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T15:19:17.679Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

Published online by Cambridge University Press:  11 February 2011

S. Yamaguchi ,
Y. Iwamura  and
A. Yamamoto
S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
Y. Iwamura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
Get access

Abstract

We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al0.55In0.45N, the maximum value of power factor was 3.63×10−4 W/mK2 at 873K. For Al0.02In0.98O1.14N0.49 and Al0.14In0.86O1.30N0.67, the maximum power factor was 2.82×10−4 W/mK2 and 4.73×10−4 W/mK2 at 873 K, respectively. For InO0.82N0.86, it was 3.75×10−4 W/mK2 at 973 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.11
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mahan, G., Sales, B., and Sharp, J., Phys. Today 50, 42 (1997).Google Scholar
2. Mahan, G. D., Solid State Phys. 51, 81 (1998).Google Scholar
3. Shin, W., Murayama, M., Ikeda, K., and Sago, S., Jpn. J. Appl. Phys. 39, 1254 (2000).Google Scholar
4. Bhattacharya, S., Pope, A. L., Littleton, R. T., Tritt, T. M., Ponnambalam, V., Xia, Y., and Poon, S. J., Appl. Phys. Lett. 77, 2476 (2000).Google Scholar
5. Dismukes, J. P., Ekstrom, L., Steigmeier, E. F., Kudman, I., and Beers, D. S., J. Appl. Phys. 35, 2899 (1964).Google Scholar
6. Sales, B. C., Mandrus, D., and Williams, R. K., Sicence 272, 1325 (1996).Google Scholar
7. Yamaguchi, S., Kariya, M., Nitta, S., Amano, H., and Akasaki, I., Appl. Phys. Lett. 76, 876 (2000).Google Scholar