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Thermoelectric Properties of Boron and Boron Phosphide Film

Published online by Cambridge University Press:  25 February 2011

Y. Kumashiro ,
T. Yokoyama ,
J. Nakahura ,
K. Hatsuda ,
H. Yoshida  and
J. Takahashi
Y. Kumashiro
Affiliation:
Yokohama National University, Tokiwadai 156 Hodogaya-ku, Yokohama, Kanagawa, 240 Japan
T. Yokoyama
Affiliation:
Yokohama National University, Tokiwadai 156 Hodogaya-ku, Yokohama, Kanagawa, 240 Japan
J. Nakahura
Affiliation:
Yokohama National University, Tokiwadai 156 Hodogaya-ku, Yokohama, Kanagawa, 240 Japan
K. Hatsuda
Affiliation:
Institute of Industrial Science, University of Tokyo, 7–22-l, Roppongi, Minatoku, Tokyo, 106 Japan
H. Yoshida
Affiliation:
Yokohama National University, Tokiwadai 156 Hodogaya-ku, Yokohama, Kanagawa, 240 Japan
J. Takahashi
Affiliation:
Sumitomo Metal Mining Coorporation, 3–5–3 Nishihara-cho, Niihama, Ehime, 792 Japan
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Abstract

This paper describes the thermoelectric properties of amorphous or polycrystalline boron and boron phosphide films prepared using chemical vapor deposition and molecular beam deposition. The temperature dependencies of electrical conductivity of a-B and distorted B13P2 films obey the Mott's rule of loga vs T-1/4, while those of polycrystalline BP films have linear relationship between loga vs T-1. The a-B and B13P2 films have high electric resistivity and show p-type conductors while BP film shows n-type conductor. The estimated thermoelectric figure of merit of boron phosphide film is compatible to that of sintered specimen, but there remains some problems for a-B to alter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 629
Copyright
Copyright © Materials Research Society 1992

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References

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