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Thermoelectric Properties and Electronic Structure of BaBiTe3

  • Duck-Young Chung (a1), Stéphane Jobic (a2), Tim Hogan (a3), Carl R. Kannewurf (a3), Raymond Brec (a2), Jean Rouxel (a2) and Mercouri G. Kanatzidis (a1) (a2)...

Abstract

The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2TE4 or BaTe3 flux and was recrystallized in Ba/Te3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a=4.6077(2) A, b=17.0437(8) Å, c=18.2997(8) Å. Its structure is made of interdigitating columnar anionie [Bi4Te10(Te2)] ∞2+ “herring-bone” shaped segments which arrange into layers with Ba ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

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Thermoelectric Properties and Electronic Structure of BaBiTe3

  • Duck-Young Chung (a1), Stéphane Jobic (a2), Tim Hogan (a3), Carl R. Kannewurf (a3), Raymond Brec (a2), Jean Rouxel (a2) and Mercouri G. Kanatzidis (a1) (a2)...

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