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Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

Published online by Cambridge University Press:  25 February 2011

Kamakhya P. Ghatak ,
B. De ,
M. Mondal  and
S. N. Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta-700032, INDIA.
B. De
Affiliation:
13 Little Brook Road, CT- 06820, DARIEN, U.S.A.
M. Mondal
Affiliation:
Department of Physics, Y. S. Palpar a College, P. O.Box 721458, Midnapore, West Bengal, INDIA.
S. N. Biswas
Affiliation:
Department of Electronics and Telecommunication Engineering, B. E. College, Shibpur, Howrah-711103, West Bengal, INDIA.
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Abstract

We shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 325
Copyright
Copyright © Materials Research Society 1990

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References

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