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Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2

Published online by Cambridge University Press:  15 February 2011

Heon Lee ,
Masaaki Yuri ,
Tetsuzo Ueda  and
James S. Harris Jr.
Heon Lee
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
Masaaki Yuri
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
Tetsuzo Ueda
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
James S. Harris Jr.
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
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Abstract

Thermodynamic calculations were carried out on chloride transport vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2. At typical growth temperature and gas flow rates, both GaN formation and gas phase etching reactions of GaN are thermodynamically favored. Under thermodynamic equilibrium, most ammonia should decompose to nitrogen and hydrogen gases and gas phase etching of GaN occurs by HCI. From experimental measurements, less than 10% of the incoming ammonia decomposes and under this condition, GaN formation from GaCl3 /N2, and NH3 /N2 is thermodynamically favored. Higher V/III ratios give a larger driving force for GaN fromation. These calculations match our experimental results. Experimentally, we have optimized the growth conditions of GaN. High crystalline quality thick GaN films (10 ˜15μm) were grown on c-Al2O3. The GaN films show band edge emission dominated PL at both room temperature and 77 K. Only one set of diffraction peaks from (1012) planes with 60° spacing in the φ-scan of X-ray diffraction are observed. This indicates that the GaN films grown on c-Al2O3 are single crystalline. Typical growth rates were about 10 ˜ I5μm/hr and typical Hall mobility values of GaN films were in the range of 3 to 40 cm2/Vsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 233
Copyright
Copyright © Materials Research Society 1996

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