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Thermionic FEEM, PEEM and I/V Measurements of N-Doped CVD Diamond Surfaces

Published online by Cambridge University Press:  14 March 2011

F.A.M. Köck
Affiliation:
Department of Physics North Carolina State University Raleigh, NC 27695-8202, USA
J.M. Garguilo
Affiliation:
Department of Physics North Carolina State University Raleigh, NC 27695-8202, USA
B. Brown
Affiliation:
Department of Physics North Carolina State University Raleigh, NC 27695-8202, USA
R.J. Nemanich
Affiliation:
Department of Physics North Carolina State University Raleigh, NC 27695-8202, USA
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Abstract

Imaging of field emission and photoemission from diamond surfaces is accomplished with a high resolution photo-electron emission microscope (PEEM). Measurements obtained as a function of sample temperature up to 1000°C display thermionic field emission images (TFEEM). The system can also record the emission current versus applied voltage. N-doped diamond films have been produced by MPCVD with a N/C gas phase ratio of 48. The surfaces display uniform emission in PEEM at all temperatures. No FEEM images are detectable below 500°C. At ∼680°C the T-FEEM and PEEM images are nearly identical in intensity and uniformity. This is to be contrasted with other carbon based cold cathodes in which the emission is observed from only a low density of highly emitting sites. The I/V measurements obtained from the N-doped films in the T-FEEM configuration show a component that depends linearly on voltage at low fields. At higher fields, an approximately exponential dependence is observed. At low temperatures employed (<700°C), the results indicate a thermionic component to the emitted current.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Nemanich, R.J., Baumann, P.K., Benjamin, M.C., Nam, O.-H., Sowers, A.T., Ward, B.L., Ade, H. and Davis, R.F., Appl. Surface Sci. 130–132, 694 (1998).Google Scholar
2. Nemanich, R.J., Baumann, P.K., Benjamin, M.C., Bozeman, S.P., Ward, B.L., The Physics of Diamond, Proc. of Int. School Physics Enrico Fermi (IOS Press, Amsterdam, 1977) p. 537.Google Scholar
3. Ade, H., Yang, W., English, S.L., Hartman, J., Davis, R.F. and Nemanich, R.J., Surface Rev. and Lett. 5, 1257 (1998).Google Scholar
4. Baranauskas, V., Li, B.B., Perlevitz, A., Tosin, M.C., Durant, S.F., J. Appl. Phys. 85, 7455 (1999).Google Scholar
5. Jiang, N., Hatta, A. and Ito, T., Jpn. J. Appl. Phys. 37, 1175 (1998).Google Scholar
6. Han, I.T. and Lee, N., J. Vac. Sci. Technol. B 16, 2052 (1998).Google Scholar
7. Müller-Sebert, W., Wörner, E., Fuchs, F., Wild, C., Koidl, P., Appl. Phys. Lett. 68, 759 (1996).Google Scholar
8. Sowers, A.T., Ward, B.L., English, S.L. and Nemanich, R.J., J. Appl. Phys. 86, 3973, (1999).Google Scholar
9. Park, M., Sowers, A.T., Rinne, C. Lizzul, Schlesser, R., Bergman, L., Nemanich, R.J., Sitar, Z., Hren, J.J. and Cuomo, J.J., J. Vac. Sci. Technol. B 17, 734 (1999).Google Scholar
10. Himpsel, F.J., Knapp, J.A., Vechten, J.A. van and Eastman, D.E., Phys. Rev. B 20, 624 (1979)Google Scholar
11. Weide, J. van der, Zhang, Z., Baumann, P.K., Wensell, M.G., Bernholc, J. and Nemanich, R.J., Phys. Rev. B 50, 5803 (1986).Google Scholar
12. Han, S., Pan, L. S., Kania, D. R., Dynamics of Free Carriers in Diamond, Diamond, in Electronic Properties and Applications, Pan, L. S., Kania, D. R. Eds. (Kluwer Academic, New York, 1995) p. 242.Google Scholar